Effects of humidity on the electrical characteristics of ZnO nanowire devices
Article first published online: 13 FEB 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 5, pages 972–976, May 2012
How to Cite
Kim, J., Jeong, H. S., Ahn, Y. H., Lee, S. and Park, J.-Y. (2012), Effects of humidity on the electrical characteristics of ZnO nanowire devices. Phys. Status Solidi A, 209: 972–976. doi: 10.1002/pssa.201127460
- Issue published online: 25 APR 2012
- Article first published online: 13 FEB 2012
- Manuscript Accepted: 6 NOV 2011
- Manuscript Received: 2 AUG 2011
- humidity effect;
Changes in the electrical characteristics of individual ZnO nanowire (NW) devices when they are exposed to wet air (80% relative humidity, RH) at room temperature are investigated. Significant roughening on the surface of ZnO NWs is observed after they are exposed to wet air for more than tens of hours. I–V characteristics taken after exposure to humidity show positive shifts of the threshold voltages in ZnO NW field effect transistors (FETs), which indicate depletion of carriers. These results have implication about the long-term stability of such devices when they need to be in direct contact with the ambient environment for their operations.
Surface roughening on a ZnO NW due to exposure to humidity (left) and corresponding changes in transfer characteristics of the device with its exposure time to humidity (right).