Cu2O thin films were grown on sapphire (0001) and MgO (100) substrates by chemical vapor deposition. The crystalline, vibrational and electrical properties of the layers and the amount of incorporated background impurities have been examined. X-ray diffraction measurements revealed, that the polycrystalline films grew in (111) and (100) orientation on sapphire and in (100) orientation on MgO. Raman measurements indicated the presence of CuO inclusions in the films. The electrical properties are dominated by an acceptor level located 150 meV above the valence band. This level may originate from unintentionally incorporated silicon impurities.