Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering
Version of Record online: 11 NOV 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 2, pages 262–265, February 2012
How to Cite
Jalabert, D., Pelloux-Gervais, D., Béché, A., Hartmann, J. M., Gergaud, P., Rouvière, J. L. and Canut, B. (2012), Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering. Phys. Status Solidi A, 209: 262–265. doi: 10.1002/pssa.201127502
- Issue online: 25 JAN 2012
- Version of Record online: 11 NOV 2011
- Manuscript Accepted: 24 OCT 2011
- Manuscript Revised: 19 OCT 2011
- Manuscript Received: 23 AUG 2011
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