Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer

Authors

  • Tingting Jiang,

    1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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  • Xuegong Yu,

    1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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  • Xin Gu,

    1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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  • Deren Yang,

    Corresponding author
    1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
    • State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
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  • George Rozgonyi

    1. Department of Materials Science and Engineering, NC State University, Raleigh, NC 27695, USA
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Abstract

The effect of hydrogenation on the electrical property of a clean grain boundary (GB) in the p-type direct silicon bonded (DSB) wafers has been investigated by current–voltage (IV) and capacitance–voltage(CV) deconvolution. It is found that compared to the as-bonded GB, the energy distribution of interface states at the GB subjected to hydrogenation become shallower, and the hole capture cross-section can be reduced by about two orders of magnitude, while the density of GB states changes only slightly. Therefore, a significantly smaller potential barrier of GB could be obtained after hydrogenation. These results are interesting for us to understand the mechanism of hydrogen passivation of GBs in photovoltaics.

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