Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n-GaAs/In sandwich structure

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Abstract

ZnS thin films were deposited on glass substrates using SILAR method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological and optical properties of ZnS thin films was investigated. The crystalline and surface properties of the films improved with increasing film thickness. The energy bandgap values changed from 3.87 to 3.58 eV with increasing film thickness. The refractive index (n), high frequency dielectric constant (ε) values were calculated by using the energy bandgap values as a function of the film thickness. Also, ZnS thin film was deposited directly on n-GaAs substrate for obtaining the Zn/ZnS/n-GaAs/In sandwich structure at room temperature. The sandwich structure demonstrated clearly rectifying behaviour by the current–voltage (IV) curves at room temperature. From IV characteristics n and Φb values were calculated as 1.894 and 0.632 eV at room temperature, respectively.

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