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Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs
Article first published online: 10 MAY 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 8, pages 1568–1574, August 2012
How to Cite
Lin, N.-M., Shei, S.-C. and Chang, S.-J. (2012), Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs. Phys. Status Solidi A, 209: 1568–1574. doi: 10.1002/pssa.201127588
- Issue published online: 10 AUG 2012
- Article first published online: 10 MAY 2012
- Manuscript Accepted: 13 APR 2012
- Manuscript Revised: 2 MAR 2012
- Manuscript Received: 4 OCT 2011
- Bureau of Energy, Ministry of Economic Affairs of Taiwan, R.O.C.. Grant Number: 101-D0204-6
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