Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices

Authors

  • Sharif Md. Sadaf,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Xinjun Liu,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Myungwoo Son,

    1. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Sangsu Park,

    1. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Sakeb H. Choudhury,

    1. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Euijun Cha,

    1. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Manzar Siddik,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Jungho Shin,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    Search for more papers by this author
  • Hyunsang Hwang

    Corresponding author
    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    2. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea
    • Phone: +82 627 152380, Fax: +82 627 152304
    Search for more papers by this author

Abstract

Memory performances, especially uniformity and reliability of resistance random access memory (RRAM) devices with W/NbOx/Pt structures were investigated. Scaling down the active device area (ø = 250 nm) can significantly minimize extrinsic defects related to nonuniform switching and also demonstrate low-voltage SET/RESET operations due to increased Joule heating. Electromigration of oxygen ions under the bipolar electric field, bilayer formation, and lightning-rod effect localized at WOx/NbOx interface can explain the improved switching behavior in this novel stack. Excellent device characteristics such as lower switching voltage, fast switching speed (100 ns), high-temperature retention (>104 s, 85 °C), stable cycling endurance (107 cycles), almost 100% device yield and excellent switching uniformity are obtained.

Ancillary