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Original Paper

Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices

  1. Sharif Md. Sadaf1,
  2. Xinjun Liu1,
  3. Myungwoo Son2,
  4. Sangsu Park2,
  5. Sakeb H. Choudhury2,
  6. Euijun Cha2,
  7. Manzar Siddik1,
  8. Jungho Shin1,
  9. Hyunsang Hwang1,2,*

Article first published online: 7 MAR 2012

DOI: 10.1002/pssa.201127659

Issue

physica status solidi (a)

physica status solidi (a)

Volume 209, Issue 6, pages 1179–1183, June 2012

Additional Information

How to Cite

Sadaf, S. Md., Liu, X., Son, M., Park, S., Choudhury, S. H., Cha, E., Siddik, M., Shin, J. and Hwang, H. (2012), Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices. Phys. Status Solidi A, 209: 1179–1183. doi: 10.1002/pssa.201127659

Author Information

  1. 1

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea

  2. 2

    Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea

*Phone: +82 627 152380, Fax: +82 627 152304

Publication History

  1. Issue published online: 12 JUN 2012
  2. Article first published online: 7 MAR 2012
  3. Manuscript Accepted: 10 FEB 2012
  4. Manuscript Revised: 3 JAN 2012
  5. Manuscript Received: 14 OCT 2011

Funded by

  • National Research Foundation of Korea (NRF)
  • Korean government (MEST). Grant Number: 2011-0018646

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Keywords:

  • bilayer;
  • lightning-rod effect;
  • resistance switching;
  • uniformity

Abstract

Memory performances, especially uniformity and reliability of resistance random access memory (RRAM) devices with W/NbOx/Pt structures were investigated. Scaling down the active device area (ø = 250 nm) can significantly minimize extrinsic defects related to nonuniform switching and also demonstrate low-voltage SET/RESET operations due to increased Joule heating. Electromigration of oxygen ions under the bipolar electric field, bilayer formation, and lightning-rod effect localized at WOx/NbOx interface can explain the improved switching behavior in this novel stack. Excellent device characteristics such as lower switching voltage, fast switching speed (100 ns), high-temperature retention (>104 s, 85 °C), stable cycling endurance (107 cycles), almost 100% device yield and excellent switching uniformity are obtained.

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