Back Cover: Piezoelectric MEMS generator based on the bulk PZT/silicon wafer bonding technique (Phys. Status Solidi A 12/2011)

Authors

  • Gang Tang,

    1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Dong Chuan Road 800, 200240 Shanghai, P.R. China
    2. Department of Mechanical and Engineering, Nanchang Institute of Technology, 330099 Nanchang, P.R. China
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  • Jing-quan Liu,

    Corresponding author
    1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Dong Chuan Road 800, 200240 Shanghai, P.R. China
    • Phone: +0086 021 34207209, Fax: +0086 021 34207119
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  • He-sheng Liu,

    1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Dong Chuan Road 800, 200240 Shanghai, P.R. China
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  • Yi-gui Li,

    1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Dong Chuan Road 800, 200240 Shanghai, P.R. China
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  • Chun-sheng Yang,

    1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Dong Chuan Road 800, 200240 Shanghai, P.R. China
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  • Dan-nong He,

    1. National Engineering Research Center for Nanotechnology, 200241 Shanghai, P.R. China
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  • Viet DzungDao,

    1. Department of Micro System Technology, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga, Japan
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  • Katsuhiko Tanaka,

    1. Department of Micro System Technology, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga, Japan
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  • Susumu Sugiyama

    1. Department of Micro System Technology, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga, Japan
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Abstract

original image

As shown by Tang et al. (pp. 2913-2919), a Pb(Zr,Ti)O3 (PZT) thick film with excellent properties can be fabricated by lapping bulk PZT after bonding it to a silicon wafer at 105 °C by employing epoxy resin with preferable thermostability as the intermediate adhesive layer. Based on this technique, a piezoelectric generator for micro-electro-mechanical systems (MEMS) technology was fabricated and its performance was tested. The results show that the new thick-film preparation method is compatible with MEMS technology and the PZT thick film retains the excellent performance of bulk PZT. This method provides a new way for the preparation of high performance piezoelectric MEMS energy harvesting elements.

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