Front Cover: Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition (Phys. Status Solidi A 1/2012)

Authors

  • Min Hwa Kim,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Dae Young Moon,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Jinsub Park,

    1. Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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  • Yasushi Nanishi,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    2. Department of Photonics, Ritsumeikan University, Shiga 525-8577, Japan
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  • Gyu-Chul Yi,

    Corresponding author
    1. National Creative Research Initiative Center for Semiconductor Nanorods, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
    • Phone: +82 2 880 7169, Fax: +82 2 884 3002
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  • Euijoon Yoon

    Corresponding author
    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    2. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270, Korea
    3. Energy Semiconductor Research Center, Advanced Institute of Convergence Technology, Seoul National University, Suwon 443-270, Korea
    • Phone: +82 2 880 2651, Fax: +82 2 6008 3712
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Abstract

original image

Min Hwa Kim et al. (pp. 50–55) report on the growth mechanism of catalyst-free indium nitride nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. The cover picture shows atomic force microscopy (AFM) 3D images of an indium nitride nanostructure at initial stage. The pit formation on the c-plane surface of islands already started even within one minute of growth. The pit formation at this initial stage is thought to be related with thermal desorption at energetically unstable regions like crystalline defects in nuclei of InN. As growth time increased, small pits got bigger and at the same time islands were coalesced. Finally, InN nanorods were formed.

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