Get access

A comparative analysis of oxidation rates for thin films of SiGe versus Si

Authors

  • Ethan Long,

    Corresponding author
    1. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo, Norway
    • Phone: +47 22 85 28 40, Fax: +47 22 85 28 60
    Search for more papers by this author
  • Augustinas Galeckas,

    1. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo, Norway
    Search for more papers by this author
  • Andrej Yu. Kuznetsov

    1. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo, Norway
    Search for more papers by this author

Abstract

In order to evaluate the role of Ge as a catalyst or inhibitor for the oxidation process in SiGe, oxidation rates for sub-100-nm films of SiGe are examined and compared to previous reports and established models for Si oxidation. Values for the Ge concentration in the pile-up layer at the oxidation interface are considered as well as the more traditional approach of considering the Ge content in the as-grown SiGe film. The experimental results presented here indicate that oxidation rates for SiGe closely match those of Si and provide evidence that the presence of Ge in very thin films of SiGe does not lead to enhanced or retarded oxidation rates as compared to Si. This comparative analysis is performed with a focus on oxidation of epitaxial thin films of Si1−xGex in dry O2 at 1 atm at 800, 850, 900, 950, and 1000 °C.

Ancillary