Annealing induced defects in SiC, SiOx single layers, and SiC/SiOx hetero-superlattices
Version of Record online: 4 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 10, pages 1960–1964, October 2012
How to Cite
Ding, K., Aeberhard, U., Beyer, W., Astakhov, O., Köhler, F., Breuer, U., Finger, F., Carius, R. and Rau, U. (2012), Annealing induced defects in SiC, SiOx single layers, and SiC/SiOx hetero-superlattices. Phys. Status Solidi A, 209: 1960–1964. doi: 10.1002/pssa.201200191
- Issue online: 15 OCT 2012
- Version of Record online: 4 SEP 2012
- Manuscript Accepted: 5 JUL 2012
- Manuscript Revised: 4 JUL 2012
- Manuscript Received: 29 MAY 2012
- German Federal Ministry of Education and Research. Grant Number: 03SF0352E and the network EPR-Solar 03SF0328
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