Light induced degradation in B doped Cz-Si solar cells
Article first published online: 24 JUL 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 10, pages 1894–1897, October 2012
How to Cite
Carvalho, A., Santos, P., Coutinho, J., Jones, R., Rayson, M. J. and Briddon, P. R. (2012), Light induced degradation in B doped Cz-Si solar cells. Phys. Status Solidi A, 209: 1894–1897. doi: 10.1002/pssa.201200196
- Issue published online: 15 OCT 2012
- Article first published online: 24 JUL 2012
- Manuscript Accepted: 31 MAY 2012
- Manuscript Received: 29 MAY 2012
- Swedish Foundation for Strategic Research
- solar cells;
We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy.
Lowest energy structure of the BiO2i defect.