Damage accumulation in He implanted SiC at different temperatures

Authors

  • Jean François Barbot,

    Corresponding author
    1. Institut Prime (UPR 3346), Département Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, 86962 Futuroscope Chasseneuil, France
    • Phone: +33 5 49 49 67 34, Fax: +33 5 49 49 66 92
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  • Alain Declémy,

    1. Institut Prime (UPR 3346), Département Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, 86962 Futuroscope Chasseneuil, France
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  • Marie-France Beaufort

    1. Institut Prime (UPR 3346), Département Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, 86962 Futuroscope Chasseneuil, France
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Abstract

The defect accumulation in helium-implanted 4H–SiC was studied in a large range of temperatures through the elastic strain build-up determined by using X-ray diffraction measurements. The interstitial type defects formation and accumulation result in the strain build-up that was modelled with a multi-step damage accumulation. The gradient of strain imputed to the ion implantation processes leads to the additional step of defect accumulation where the nuclear energy loss is maximal. This phenomenon is enhanced when the formation of bubbles takes place.

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