Properties of trench defects in InGaN/GaN quantum well structures
Article first published online: 21 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 1, pages 195–198, January 2013
How to Cite
Sahonta, S.-L., Kappers, M. J., Zhu, D., Puchtler, T. J., Zhu, T., Bennett, S. E., Humphreys, C. J. and Oliver, R. A. (2013), Properties of trench defects in InGaN/GaN quantum well structures. Phys. Status Solidi A, 210: 195–198. doi: 10.1002/pssa.201200408
- Issue published online: 15 JAN 2013
- Article first published online: 21 NOV 2012
- Manuscript Accepted: 9 OCT 2012
- Manuscript Revised: 21 SEP 2012
- Manuscript Received: 20 JUN 2012
Options for accessing this content:
- If you are a society or association member and require assistance with obtaining online access instructions please contact our Journal Customer Services team.
- If your institution does not currently subscribe to this content, please recommend the title to your librarian.
- Login via other institutional login options http://onlinelibrary.wiley.com/login-options.
- You can purchase online access to this Article for a 24-hour period (price varies by title)
- If you already have a Wiley Online Library or Wiley InterScience user account: login above and proceed to purchase the article.
- New Users: Please register, then proceed to purchase the article.
Login via OpenAthens
Search for your institution's name below to login via Shibboleth.
Registered Users please login:
- Access your saved publications, articles and searches
- Manage your email alerts, orders and subscriptions
- Change your contact information, including your password
Please register to:
- Save publications, articles and searches
- Get email alerts
- Get all the benefits mentioned below!