Properties of trench defects in InGaN/GaN quantum well structures
Article first published online: 21 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 1, pages 195–198, January 2013
How to Cite
Sahonta, S.-L., Kappers, M. J., Zhu, D., Puchtler, T. J., Zhu, T., Bennett, S. E., Humphreys, C. J. and Oliver, R. A. (2013), Properties of trench defects in InGaN/GaN quantum well structures. Phys. Status Solidi A, 210: 195–198. doi: 10.1002/pssa.201200408
- Issue published online: 15 JAN 2013
- Article first published online: 21 NOV 2012
- Manuscript Accepted: 9 OCT 2012
- Manuscript Revised: 21 SEP 2012
- Manuscript Received: 20 JUN 2012
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