Anisotropy of porous silicon formation rate in p-Si
Version of Record online: 28 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Special Issue: Advanced Concepts for Silicon Based Photovoltaics
Volume 210, Issue 4, pages 723–727, April 2013
How to Cite
Astrova, E. V., Zharova, Yu. A., Ulin, V. P. and Enicheva, G. V. (2013), Anisotropy of porous silicon formation rate in p-Si. Phys. Status Solidi A, 210: 723–727. doi: 10.1002/pssa.201200472
- Issue online: 4 APR 2013
- Version of Record online: 28 NOV 2012
- Manuscript Revised: 13 OCT 2012
- Manuscript Accepted: 13 OCT 2012
- Manuscript Received: 12 JUL 2012
- EU Programme FP/2007-2013. Grant Number: N256762
- RF Presidential grant for Russian Scientific schools, NSh-3008.2012.2
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