The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection
Version of Record online: 4 DEC 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 1, pages 181–186, January 2013
How to Cite
Pirouz, P. (2013), The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection. Phys. Status Solidi A, 210: 181–186. doi: 10.1002/pssa.201200501
- Issue online: 15 JAN 2013
- Version of Record online: 4 DEC 2012
- Manuscript Accepted: 31 OCT 2012
- Manuscript Revised: 23 OCT 2012
- Manuscript Received: 20 JUL 2012
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