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The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection
Article first published online: 4 DEC 2012
DOI: 10.1002/pssa.201200501
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1862-6319/asset/cover.gif?v=1&s=53003db56679887cfe4b0b6e74b0766cd9c3994f "physica status solidi (a)")
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How to Cite
Pirouz, P. (2013), The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection. Phys. Status Solidi A, 210: 181–186. doi: 10.1002/pssa.201200501
Publication History
- Issue published online: 15 JAN 2013
- Article first published online: 4 DEC 2012
- Manuscript Accepted: 31 OCT 2012
- Manuscript Revised: 23 OCT 2012
- Manuscript Received: 20 JUL 2012
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