Deceased (May 2012).
Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire
Article first published online: 21 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 1, pages 199–203, January 2013
How to Cite
Dimitrakopulos, G. P., Lotsari, A., Kehagias, Th., Ajagunna, A., Georgakilas, A., Karakostas, Th. and Komninou, Ph. (2013), Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire. Phys. Status Solidi A, 210: 199–203. doi: 10.1002/pssa.201200552
- Issue published online: 15 JAN 2013
- Article first published online: 21 NOV 2012
- Manuscript Accepted: 16 OCT 2012
- Manuscript Revised: 2 OCT 2012
- Manuscript Received: 31 JUL 2012
- electron microscopy;
Based on bicrystal symmetry and transmission electron microscopy observations, we elaborate on the coexistence of the two orientation variants of semipolar s-plane () InN epilayers grown on r-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). It is shown that variant coexistence is favored by a high order of coincident symmetry ensuring significant lattice continuity. The (0002) || () low-energy grain boundary was identified to principally delimit the two InN variants. Aside of the variant coexistence, the InN/sapphire interface was observed to comprise protrusions attributed to the InN buffer layer growth. Rapid thermal annealing was employed in order to improve the epilayer quality and it was found to induce defect reduction attributed to dislocation glide. However, the InN/sapphire interface was adversely affected by this process.