Silicon nanocrystals from high-temperature annealing: Characterization on device level
Article first published online: 25 FEB 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Special Issue: Advanced Concepts for Silicon Based Photovoltaics
Volume 210, Issue 4, pages 669–675, April 2013
How to Cite
Löper, P., Canino, M., López-Vidrier, J., Schnabel, M., Schindler, F., Heinz, F., Witzky, A., Bellettato, M., Allegrezza, M., Hiller, D., Hartel, A., Gutsch, S., Hernández, S., Guerra, R., Ossicini, S., Garrido, B., Janz, S. and Zacharias, M. (2013), Silicon nanocrystals from high-temperature annealing: Characterization on device level. Phys. Status Solidi A, 210: 669–675. doi: 10.1002/pssa.201200824
- Issue published online: 4 APR 2013
- Article first published online: 25 FEB 2013
- Manuscript Accepted: 24 JAN 2013
- Manuscript Revised: 15 DEC 2012
- Manuscript Received: 9 OCT 2012
- European Community's Seventh Framework Programme (FP7/2007–2013). Grant Number: n°: 245977
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