Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation
Version of Record online: 5 JUL 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 8, pages 1522–1524, August 2013
How to Cite
Smagina, Z., Novikov, P., Zinovyev, V., Stepina, N., Dvurechenskii, A., Armbrister, V., Seleznev, V. and Kuchinskaya, P. (2013), Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation. Phys. Status Solidi A, 210: 1522–1524. doi: 10.1002/pssa.201200906
- Issue online: 14 AUG 2013
- Version of Record online: 5 JUL 2013
- Manuscript Accepted: 17 MAY 2013
- Manuscript Revised: 3 APR 2013
- Manuscript Received: 29 OCT 2012
- RFBR. Grant Numbers: 13-02-01181, 12-02-90036
- Scientific and educational personnel of innovation Russia. Grant Number: 8228
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