Low interface state density and low leakage current of atomic-layer deposited TiO2/Al2O3/sulfur-treated GaAs
Article first published online: 11 JUL 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 11, pages 2147–2150, November 2012
How to Cite
Lee, M.-K. and Yen, C.-F. (2012), Low interface state density and low leakage current of atomic-layer deposited TiO2/Al2O3/sulfur-treated GaAs. Phys. Status Solidi A, 209: 2147–2150. doi: 10.1002/pssa.201228093
- Issue published online: 19 NOV 2012
- Article first published online: 11 JUL 2012
- Manuscript Accepted: 12 JUN 2012
- Manuscript Revised: 4 JUN 2012
- Manuscript Received: 10 FEB 2012
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