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Keywords:

  • defects;
  • GaAs;
  • photoluminescence;
  • strain;
  • ZnTe

Abstract

The photoluminescence (PL) properties of the ZnTe epilayers grown on (100) GaAs substrates with various substrate temperatures have been investigated. It has been demonstrated that the PL spectra depend strongly on the substrate temperature. A too low (390 °C) or too high (440 °C) substrate temperature deteriorates the epilayer quality due to the formation of defects or/and to the inclusion of impurities. A moderate substrate temperature (around 420 °C) is suitable to obtain a high-quality epilayer with the narrow spectral width and strong emission intensity. This is attributed to the moderate substrate temperature improving the crystallinity of the ZnTe epilayer by enhancing recrystallization of the adsorbed precursors.