The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices



We have fabricated an Au/perylene–monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current–voltage (IV) measurements on the device in the temperature range of 75–300 K were carried out. An abnormal decrease in the experimental barrier height ΦB and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities.