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Original Paper
The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices
Article first published online: 6 AUG 2012
DOI: 10.1002/pssa.201228163
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Tuğluoğlu, N., Yüksel, Ö. F., Şafak, H. and Karadeniz, S. (2012), The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices. Phys. Status Solidi A, 209: 2313–2316. doi: 10.1002/pssa.201228163
Publication History
- Issue published online: 19 NOV 2012
- Article first published online: 6 AUG 2012
- Manuscript Accepted: 13 JUL 2012
- Manuscript Revised: 3 JUL 2012
- Manuscript Received: 12 MAR 2012
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Keywords:
- barrier height;
- Gaussian distribution;
- perylene–monoimide;
- organic semiconductors;
- Schottky diodes
Abstract
We have fabricated an Au/perylene–monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current–voltage (I–V) measurements on the device in the temperature range of 75–300 K were carried out. An abnormal decrease in the experimental barrier height ΦB and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities.