Original Paper

The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices

  1. Nihat Tuğluoğlu1,
  2. Ö. Faruk Yüksel2,*,
  3. Haluk Şafak2,
  4. Serdar Karadeniz1

Article first published online: 6 AUG 2012

DOI: 10.1002/pssa.201228163

Issue

physica status solidi (a)

physica status solidi (a)

Volume 209, Issue 11, pages 2313–2316, November 2012

Additional Information

How to Cite

Tuğluoğlu, N., Yüksel, Ö. F., Şafak, H. and Karadeniz, S. (2012), The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices. Phys. Status Solidi A, 209: 2313–2316. doi: 10.1002/pssa.201228163

Author Information

  1. 1

    Department of Research and Development, Sarayköy Nuclear Research and Training Center, 06983 Ankara, Turkey

  2. 2

    Faculty of Science, Department of Physics, Selçuk University Campus, 42075 Konya, Turkey

*Phone: +90 332 223 25 90, Fax: +90 332 241 24 99

Publication History

  1. Issue published online: 19 NOV 2012
  2. Article first published online: 6 AUG 2012
  3. Manuscript Accepted: 13 JUL 2012
  4. Manuscript Revised: 3 JUL 2012
  5. Manuscript Received: 12 MAR 2012

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    Mamta Sharma, S. K. Tripathi, Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures, Applied Physics A, 2013,

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    N. Tuğluoğlu, Ö.F. Yüksel, S. Karadeniz, H. Şafak, Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique, Materials Science in Semiconductor Processing, 2013, 16, 3, 786

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