Copper-alloyed ZnS as a p-type transparent conducting material

Authors

  • Anthony M. Diamond,

    1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
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  • Luca Corbellini,

    1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
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  • K. R. Balasubramaniam,

    1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
    2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, 2929 Seventh Street, Berkeley, CA 94710, USA
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  • Shiyou Chen,

    1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
    2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, 2929 Seventh Street, Berkeley, CA 94710, USA
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  • Shuzhi Wang,

    1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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  • Tyler S. Matthews,

    1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, 2929 Seventh Street, Berkeley, CA 94710, USA
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  • Lin-Wang Wang,

    1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
    2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, 2929 Seventh Street, Berkeley, CA 94710, USA
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  • Ramamoorthy Ramesh,

    1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    2. Department of Physics, University of California, Berkeley, CA 94720, USA
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  • Joel W. Ager

    Corresponding author
    1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
    2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, 2929 Seventh Street, Berkeley, CA 94710, USA
    • Phone: +011 1 510 486 6715, Fax: +011 510 486 4995
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Abstract

Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06–0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm−1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated.

original image

Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO.

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