Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates
Article first published online: 20 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 12, pages 2641–2645, December 2012
How to Cite
Krishna, K. M., Anoop, G. and Jayaraj, M. K. (2012), Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates. Phys. Status Solidi A, 209: 2641–2645. doi: 10.1002/pssa.201228204
- Issue published online: 12 DEC 2012
- Article first published online: 20 SEP 2012
- Manuscript Accepted: 5 SEP 2012
- Manuscript Revised: 31 AUG 2012
- Manuscript Received: 30 MAR 2012
- rf magnetron sputtering;
An alternating current thin film electroluminescent (ACTFEL) device was fabricated on commercial glass substrate with dysprosium doped zinc gallate as the active layer. The phosphor layer and the top dielectric layer were deposited using rf magnetron sputtering technique. The devices fabricated with an asymmetric double insulating structure gave a white electroluminescent (EL) emission when driven by a voltage pulse frequency of 1.5 kHz, even without post-deposition annealing of the active layer. Such an emission resulted from the simultaneous occurrence of multicolor transitions, characteristic of the dopant ion. The exponential dependence of luminance on applied voltage was quite evident from the luminance–voltage (L–V) curves. Devices were also fabricated with a highly crystallized interfacial layer of ZnO in between the substrate and the phosphor layer. Such devices could withstand a wider range of applied voltage, henceforth resulting in enhanced device performance. The chromatic quality of the EL emissions from both the devices were gauged using chromaticity coordinates.
The CIE coordinates of fabricated ZnGa2O4:Dy3+ ACTFEL devices (a) without and (b) with ZnO interfacial layer.