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Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates

Authors

  • K. Mini Krishna,

    1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022, India
    2. Present address: Department of Physics, Vimala College, Thrissur-9, Kerala, India
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  • G. Anoop,

    1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022, India
    2. Present address: Display Materials Laboratory, School of Chemical Engineering and Materials Science, Chung Ang University, Seoul 156-756, Korea
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  • M. K. Jayaraj

    Corresponding author
    1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022, India
    • Phone: +91 4842577404, Fax: +91 4842577595
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Abstract

An alternating current thin film electroluminescent (ACTFEL) device was fabricated on commercial glass substrate with dysprosium doped zinc gallate as the active layer. The phosphor layer and the top dielectric layer were deposited using rf magnetron sputtering technique. The devices fabricated with an asymmetric double insulating structure gave a white electroluminescent (EL) emission when driven by a voltage pulse frequency of 1.5 kHz, even without post-deposition annealing of the active layer. Such an emission resulted from the simultaneous occurrence of multicolor transitions, characteristic of the dopant ion. The exponential dependence of luminance on applied voltage was quite evident from the luminance–voltage (LV) curves. Devices were also fabricated with a highly crystallized interfacial layer of ZnO in between the substrate and the phosphor layer. Such devices could withstand a wider range of applied voltage, henceforth resulting in enhanced device performance. The chromatic quality of the EL emissions from both the devices were gauged using chromaticity coordinates.

original image

The CIE coordinates of fabricated ZnGa2O4:Dy3+ ACTFEL devices (a) without and (b) with ZnO interfacial layer.

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