Electrical properties of individual GaP nanowires doped by zinc



Gallium phosphide nanowires (NWs) doped by zinc were prepared on (111)B GaP substrates by low-pressure metal-organic vapor phase epitaxy using 30 nm Au seed particles. The NWs were transferred onto SiO2/Si substrate. Single NWs were processed into two- and four-probe back-gated devices electrically contacted via low-resistance ohmic contacts, formed by evaporation of Au + Zn alloy that was annealed at 400 °C. The device topology was defined using electron beam lithography (EBL) and lift-off. The NW electrical properties were evaluated from IV characteristics measured for various gate voltages. The measurement gave evidence that the NW were p-type. The NW resistivity and hole concentration were between 0.254 and 0.325 Ωcm, and 0.9–1.5 × 1018 cm−3, respectively.