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Original Paper

Electrical properties of individual GaP nanowires doped by zinc

  1. Jozef Novak1,*,
  2. Ján Šoltýs1,
  3. Peter Eliáš1,
  4. Stanislav Hasenöhrl1,
  5. Roman Stoklas1,
  6. Agata Dujavová1,
  7. Martin Mikulics2

Article first published online: 1 OCT 2012

DOI: 10.1002/pssa.201228255

Issue

physica status solidi (a)

physica status solidi (a)

Volume 209, Issue 12, pages 2505–2509, December 2012

Additional Information

How to Cite

Novak, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Dujavová, A. and Mikulics, M. (2012), Electrical properties of individual GaP nanowires doped by zinc. Phys. Status Solidi A, 209: 2505–2509. doi: 10.1002/pssa.201228255

Author Information

  1. 1

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic

  2. 2

    Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany

*Phone: +421 2 5922 2761, Fax: +421 2 5477 5816

Publication History

  1. Issue published online: 12 DEC 2012
  2. Article first published online: 1 OCT 2012
  3. Manuscript Accepted: 14 SEP 2012
  4. Manuscript Revised: 5 SEP 2012
  5. Manuscript Received: 20 APR 2012

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Keywords:

  • GaP nanowires;
  • MOVPE;
  • zinc doping

Abstract

Gallium phosphide nanowires (NWs) doped by zinc were prepared on (111)B GaP substrates by low-pressure metal-organic vapor phase epitaxy using 30 nm Au seed particles. The NWs were transferred onto SiO2/Si substrate. Single NWs were processed into two- and four-probe back-gated devices electrically contacted via low-resistance ohmic contacts, formed by evaporation of Au + Zn alloy that was annealed at 400 °C. The device topology was defined using electron beam lithography (EBL) and lift-off. The NW electrical properties were evaluated from I–V characteristics measured for various gate voltages. The measurement gave evidence that the NW were p-type. The NW resistivity and hole concentration were between 0.254 and 0.325 Ωcm, and 0.9–1.5 × 1018 cm−3, respectively.

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