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Prediction of the thermal conductivity of SiC nanowires with kinetic theory of gases


  • Patrice Chantrenne,

    Corresponding author
    1. INSA de Lyon, MATEIS UMR CNRS 5510, 69621 Villeurbanne, France
    2. INSA de Lyon, Université de Lyon, Université Lyon 1, 69621 Villeurbanne, France
    • Phone: +33-4-7243-6155, Fax: +33-4-7243-8528
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  • Konstantinos Termentzidis

    1. Laboratoire d'Energétique Moléculaire et Macroscopique, CNRS UPR 288, Ecole Centrale Paris, France
    2. INSA de Lyon, CETHIL UMR CNRS 5008, 69621 Villeurbanne, France
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Thermal conductivity of silicon carbide nanowires is predicted using a model based on the kinetic theory of gas (KTG). Within this model, the energy carriers, which are the phonons, are considered as a gas whose basic properties are given by phonon dispersion curves and relaxation times of phonons. This model can give results for large spectra of temperature and sizes of nanowires in comparison to Molecular Dynamics (MD) method. The model is validated with the comparison of the results with other theoretical and experimental ones for the constant volume specific heat, the density of states and the bulk thermal conductivity function the temperature. The model is applied to SiC nanowires and the axial and radial thermal conductivities of nanowires are predicted. Comparison with MD results for the same size of nanowires is given.

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