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Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells

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Abstract

Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wavefunctions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.

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