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Original Paper
Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence
Article first published online: 9 AUG 2012
DOI: 10.1002/pssa.201228383
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Giesecke, J. A., Schubert, M. C. and Warta, W. (2012), Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence. Phys. Status Solidi A, 209: 2286–2290. doi: 10.1002/pssa.201228383
Publication History
- Issue published online: 19 NOV 2012
- Article first published online: 9 AUG 2012
- Manuscript Accepted: 19 JUL 2012
- Manuscript Revised: 13 JUL 2012
- Manuscript Received: 10 MAY 2012
- Abstract
- Article
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- Cited By
Keywords:
- carrier lifetime;
- photoluminescence;
- silicon
Abstract
Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silicon. A recent approach extracts carrier lifetime without a priori information about dopant concentration [Appl. Phys. Lett. 97, 092109 (2010)]. It utilizes the phase shift between a time-modulated optical irradiation and the radiative recombination of a sample, while requiring a minimum of two measurements. The present paper is aimed at a generalization thereof that requires only one measurement. It brings about a substantial experimental simplification, significantly improved accuracy and precision, and it opens up paths to access material properties other than lifetime.