Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability
Article first published online: 20 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 12, pages 2646–2652, December 2012
How to Cite
Möreke, J., Ťapajna, M., Uren, M. J., Pei, Y., Mishra, U. K. and Kuball, M. (2012), Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability. Phys. Status Solidi A, 209: 2646–2652. doi: 10.1002/pssa.201228395
- Issue published online: 12 DEC 2012
- Article first published online: 20 SEP 2012
- Manuscript Accepted: 5 SEP 2012
- Manuscript Revised: 27 JUL 2012
- Manuscript Received: 14 JUN 2012
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