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Keywords:

  • in situ annealing;
  • molecular beam epitaxy;
  • quantum dots;
  • site-selective growth

Abstract

Thumbnail image of graphical abstract

A review on the growth and characterization of site-selective quantum dots (QDs) is presented. First, a theoretical model is used to describe the mechanism leading to the formation of QDs at pre-defined locations. The structural properties of site-selective QDs was revealed and their optical quality was tested. Various parameters, such as hole size, hole depth, or InAs amount, influencing the QD occupation and the QD size are discussed and possible ways to control these are presented.

Ordered QD array with multiple dot nucleation (left) and single QD in dry etched hole (right).