Growth and characterization of site-selective quantum dots

Authors

  • Mathieu Helfrich,

    1. DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1a, 76131 Karlsruhe, Germany
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  • Philipp Schroth,

    1. Institute for Synchrotron Radiation/ANKA, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
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  • Daniil Grigoriev,

    1. Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Engesserstraße 15, 76131 Karlsruhe, Germany
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  • Sergey Lazarev,

    1. Institute for Synchrotron Radiation/ANKA, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
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  • Roberto Felici,

    1. ESRF, 6 rue Jules Horowitz, BP 220, 38043 Grenoble Cedex, France
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  • Taras Slobodskyy,

    1. Institute for Applied Physics, University Hamburg, Jungiusstraße 11, 20355 Hamburg, Germany
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  • Tilo Baumbach,

    1. Institute for Synchrotron Radiation/ANKA, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
    2. Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Engesserstraße 15, 76131 Karlsruhe, Germany
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  • Daniel M. Schaadt

    Corresponding author
    1. DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1a, 76131 Karlsruhe, Germany
    2. Institute for Energy Research and Physical Technologies, Technical University Clausthal, Am Stollen 19B, 38640 Goslar, Germany
    • Phone: +49 5323 72 2322, Fax: +49 5323 72 2175
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Abstract

A review on the growth and characterization of site-selective quantum dots (QDs) is presented. First, a theoretical model is used to describe the mechanism leading to the formation of QDs at pre-defined locations. The structural properties of site-selective QDs was revealed and their optical quality was tested. Various parameters, such as hole size, hole depth, or InAs amount, influencing the QD occupation and the QD size are discussed and possible ways to control these are presented.

original image

Ordered QD array with multiple dot nucleation (left) and single QD in dry etched hole (right).

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