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Hydrogen influence on the electrical properties of sputtered InN thin films

Authors


Corresponding authors: e-mail marinsparvoli@yahoo.com.br, Phone: +55 11 8533 3394, Fax: +55 11 3091 5664

e-mail chubaci@if.usp.br, Phone: +55 11 3091 6684, Fax: +55 11 3031 2742

Abstract

The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work's main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.

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