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Original Paper

Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire

  1. Ronny Kirste1,*,
  2. Markus R. Wagner1,
  3. Christian Nenstiel1,
  4. Frank Brunner2,
  5. Markus Weyers2,
  6. Axel Hoffmann1

Article first published online: 25 OCT 2012

DOI: 10.1002/pssa.201228506

Issue

physica status solidi (a)

physica status solidi (a)

Volume 210, Issue 2, pages 285–290, February 2013

Additional Information

How to Cite

Kirste, R., Wagner, M. R., Nenstiel, C., Brunner, F., Weyers, M. and Hoffmann, A. (2013), Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire. Phys. Status Solidi A, 210: 285–290. doi: 10.1002/pssa.201228506

Author Information

  1. 1

    TU Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany

  2. 2

    Ferdinand Braun Institut, Gustav-Kirchhoff Str. 4, 12489 Berlin, Germany

*Phone: +49-30-314-22065, Fax: +49-30-314-22064

Publication History

  1. Issue published online: 15 FEB 2013
  2. Article first published online: 25 OCT 2012
  3. Manuscript Accepted: 1 OCT 2012
  4. Manuscript Revised: 24 SEP 2012
  5. Manuscript Received: 25 JUL 2012

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Keywords:

  • AlN;
  • buffer layers;
  • exciton pressure coefficient;
  • nitrides;
  • photoluminescence;
  • Raman spectroscopy

Abstract

The effect of a trimethylgallium (TMGa) preflow on the structural and optical properties of MOCVD grown AlN layers on sapphire substrates is investigated. Secondary ion mass spectroscopy measurements were performed to investigate the incorporation of Ga in the layers. It is shown that for AlN layers grown with a TMGa preflow Ga atoms incorporate mainly near the substrate/epilayer interface. Photoluminescence spectra exhibit a free exciton and a donor bound exciton. By analyzing the full width at half maximum of the free exciton and the defect luminescence an increased optical quality for the sample grown with TMGa preflow is demonstrated. Additionally, Raman spectroscopy reveals a higher crystal quality for this sample. Comparing the results from Raman spectroscopy and luminescence measurements a shift rate of 60 meV GPa−1 is determined for the free A-exciton. Finally, cross-sectional Raman spectroscopy is used to compare the strain at the AlN/sapphire interface for a sample grown with and without TMGa preflow.

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