Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire
Version of Record online: 25 OCT 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 2, pages 285–290, February 2013
How to Cite
Kirste, R., Wagner, M. R., Nenstiel, C., Brunner, F., Weyers, M. and Hoffmann, A. (2013), Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire. Phys. Status Solidi A, 210: 285–290. doi: 10.1002/pssa.201228506
- Issue online: 15 FEB 2013
- Version of Record online: 25 OCT 2012
- Manuscript Accepted: 1 OCT 2012
- Manuscript Revised: 24 SEP 2012
- Manuscript Received: 25 JUL 2012
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