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Original Paper
Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering
Article first published online: 27 DEC 2012
DOI: 10.1002/pssa.201228527
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Knutsen, K. E., Schifano, R., Marstein, E. S., Svensson, B. G. and Kuznetsov, A. Yu. (2013), Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering. Phys. Status Solidi A, 210: 585–588. doi: 10.1002/pssa.201228527
Publication History
- Issue published online: 6 MAR 2013
- Article first published online: 27 DEC 2012
- Manuscript Accepted: 3 DEC 2012
- Manuscript Revised: 27 NOV 2012
- Manuscript Received: 2 AUG 2012
- Abstract
- Article
- References
- Cited By
Keywords:
- band offsets;
- heterojunctions;
- silicon;
- solar cells;
- ZnMgO
Abstract
A significant conduction band offset appearing in n-ZnO/p-Si heterojunction solar cells is recognized as a serious roadblock to obtain high efficiency solar cells. By alloying with Mg, the conduction band in Zn1–xMgxO can be raised above that of Si, so that the influence of recombination centers at the interface between the two materials is strongly reduced, enabling high efficiency despite recombination velocities as high as 106 cm s−1. By simulating these phenomena we predict an optimal design of a n-Zn0.8Mg0.2O/p-Si solar cell resulting in high conversion efficiencies.