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Ultralow electron mobility of an individual Cu-doped ZnO nanowire

Authors

  • Xiaokai Jia,

    1. Faculty of Electronic Information and Electrical Engineering, School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, P. R. China
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  • Hongjun Xu,

    1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
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  • Jingyun Gao,

    1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
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  • Xiaoning Jia,

    1. Faculty of Electronic Information and Electrical Engineering, School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, P. R. China
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  • Huichao Zhu,

    Corresponding author
    • Faculty of Electronic Information and Electrical Engineering, School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, P. R. China
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  • Dapeng Yu

    1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
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Corresponding author: e-mail zhuhuichao@dlut.edu.cn, Phone: +86 411 84706710, Fax: +86 411 84706706

Abstract

In this work, we synthesized Cu-doped ZnO nanowires through a vapor–liquid–solid process. We investigated their composition and photoluminescence properties; and we found the Cu-doped ZnO nanowires have a c-axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C-shaped Cu-doped ZnO nanowire. The electrical studies reveal that the Cu-doped ZnO nanowire has n-type conductivity and ultralow electron mobility.

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