We demonstrate synthesis of graphene using the solid precursor camphor in a microwave excited surface wave plasma chemical vapor deposition technique. Highly sublimely camphor was introduced into the plasma chamber in the vapor phase along with Ar and uniform plasma formation was obtained. Rapid deposition of a graphene film on Cu foil was achieved at a relatively low temperature (<600 °C). Raman spectroscopy and transmission electron microscopy clearly showed that the deposited film on Cu foil consist of few-layer graphene. Fully flexible transparent electrode was fabricated by transferring the graphene film with excellent properties for device application.
Synthesis of large-area graphene film from solid botanical derivative camphor (C10H16O) in a surface wave microwave plasma CVD technique.