Crystalline graphite oxide/PVDF nanocomposite gate dielectric: Low-voltage and high field effect mobility thin-film transistor



We fabricated an anthracene thin-film transistor (TFT) with an ultrathin layer (∼450 nm) of poly-vinylidene fluoride (PVDF)/graphite oxide nanoplatelets (GOnP) nanocomposite as a gate insulator. We obtained a TFT device with excellent electrical characteristics at low operating voltages (<1 V). The dielectric is a high-ε gate insulator with a static dielectric constant of εr = 15.6. This device was found to have a field effect mobility of 1.1 cm2 V−1 s, a threshold voltage of 0.34 V, an exceptionally low subthreshold slope (SS) of 380 mV decade−1 and an on/off ratio of 105. The combination of favorable properties opens up the possibility to utilize such TFTs effectively at voltages as low as below 1 V. Such high-ε PVDF/GOnP gate dielectric appears to be highly promising candidates for organic nonvolatile memories and sensor field effect transistors (FETs).