Growth of silicon nanowires by sputtering and evaporation methods

Authors

  • Thuy Thi Nguyen,

    1. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Anh Xuan Vuong,

    1. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Luan Duc Mai,

    1. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Tuan Hoang Nguyen,

    1. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Tu Nguyen,

    1. Advanced Institute of Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Chien Duc Nguyen,

    1. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
    2. Advanced Institute of Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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  • Lam Huu Nguyen

    Corresponding author
    1. Advanced Institute of Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
    • School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet, 10000 Hanoi, Vietnam
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Corresponding author: e-mail lam.nguyenhuu@hust.edu.vn, Phone: +84 4 38682540, Fax: +84 4 38693498

Abstract

Silicon nanowires (Si NWs) were fabricated on Si (111) surfaces using both magnetron sputtering and thermal evaporation methods. Au thin layers were deposited using the electron-beam (e-beam) evaporation method and used as metal catalysts. The Au particles were formed by annealing at high temperature; their dimensions depended on the Au layer thickness and affected the formation and dimension of Si NWs. Field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. Photoluminescence (PL) measurement was conducted to demonstrate the quantum confinement effect of the Si NWs.

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