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Keywords:

  • atomic layer deposition;
  • dielectric properties;
  • HfO2;
  • InP;
  • thin films

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.