Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

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Corresponding author: e-mail ykuo@cc.ncue.edu.tw, Phone: +886 4 724 8812, Fax: +886 4 721 1153

Abstract

Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

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