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Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

Authors

  • Jinyan Song,

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
    2. State Key Laboratory of Modern Optical Instrumentation, Centre for Integrated Optoelectronics, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, P. R. China
    3. Institut des Sciences Moléculaires, CNRS, University Paris Sud, Bâtiment 350, 91405 Orsay Cedex, France
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  • Sophie Bouchoule,

    Corresponding author
    • Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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  • Gilles Patriarche,

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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  • Elisabeth Galopin,

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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  • Alejandro M. Yacomotti,

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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  • Edmond Cambril,

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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  • Qingli Kou,

    1. Institut des Sciences Moléculaires, CNRS, University Paris Sud, Bâtiment 350, 91405 Orsay Cedex, France
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  • David Troadec,

    1. Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN), CNRS, University Lille I, Villeneuve d'Ascq, France
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  • Jian-Jun He,

    1. State Key Laboratory of Modern Optical Instrumentation, Centre for Integrated Optoelectronics, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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  • Jean-Christophe Harmand

    1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis, France
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Corresponding author: e-mail sophie.bouchoule@lpn.cnrs.fr, Phone: +33 169 636 153, Fax: +33 169 636 006

Abstract

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces a rough interface between the oxidized and non-oxidized materials and reduces the effective thickness of the adjacent layers. This detrimental phenomenon is drastically reduced when the adjacent layer is replaced by a GaAs/AlAs superlattice (SL). In this case, a sharp interface between the Al-Ga-oxide and the SL is obtained after the oxidation process. Further experiments point out the critical role of hydrogen in the oxidation process of low Al content alloys. Hydrogen atoms produced during the oxidation of the Al-rich layer are proposed to be responsible for the vertical oxidation of the adjacent layers. We devise that the SL interfaces are favorable to reduce the diffusion of the reactants in the vertical direction.

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