Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice
Version of Record online: 19 FEB 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 6, pages 1171–1177, June 2013
How to Cite
Song, J., Bouchoule, S., Patriarche, G., Galopin, E., Yacomotti, A. M., Cambril, E., Kou, Q., Troadec, D., He, J.-J. and Harmand, J.-C. (2013), Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice. Phys. Status Solidi A, 210: 1171–1177. doi: 10.1002/pssa.201228770
- Issue online: 18 JUN 2013
- Version of Record online: 19 FEB 2013
- Manuscript Accepted: 30 JAN 2013
- Manuscript Revised: 26 JAN 2013
- Manuscript Received: 12 NOV 2012
- Doctoral Fellowship from the French Embassy of China
- Research Fund for the Doctoral Program of the Ministry of Education of China. Grant Number: 20110101110060
- LPN, and Institut des Sciences Moleculaires d'Orsay (ISMO).
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